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为了曝光SU-8光刻胶,必须使用波长为365nm的紫外光。 曝光波长的变化可以改变光刻胶层发生交联所需要的能量,有时候,也可以通过调整曝光时间来改变光刻胶层交联反应所需要的能量。 1、光刻:制备掩膜版、旋涂光刻胶,采用常规365nm的波长曝光。 可通过添加抗反射涂层到衬底上减少不必要的反射,以实现更准确的特征尺寸控制,同样地,SU-8也可以通过结合紫外线光刻技术和立体光刻技术,实现SU-8三维结构的制造。 本文介绍了SU-8光刻工艺中的关键步骤:确定膜厚、曝光光强及显影时间。 这些参数对于确保最终产品的质量和性能至关重要。
SU-8的光刻机理简述如下: 光刻胶中的光引发剂吸收光子发生了光化学反应, 生成一种强酸, 其作用是在中烘过程中作为酸催化剂促进交 联反应的发生。只有曝光区域的光刻胶中才含有强酸, 而未曝光的区域则没有这种强酸的存在。 本发明公开了一种利用h线激光直写机进行i线SU8系列光刻胶曝光的方法,属于半导体领域.包括如下步骤:在覆盖有功能层的衬底上涂覆SU8系列光刻胶,所述光刻胶完整覆盖整个功能层表面;对涂覆有SU8系列光刻胶的样品进行曝光前烘烤工艺;将烘烤后的样品置于激光直. 对SU8紫外曝光工艺产生一定的影响。 图1是 玻璃基底SU8光刻后部分微管道和光栅底部留� � 残留光刻胶、无法显影干净的情况。对此本文研究了影响透光性基底上SU8微流体管道紫外光刻的因素及其解决方法从而为可实现光集成微流控芯片
为了成功紫外曝光并且根据所需要的分辨率,光刻胶掩模必须尽可能的靠近SU-8光刻胶放置,不要有任何干扰。 如要这样做,可检查如下几件事。
1)将预热后的硅片放置在桌面光刻机托盘上。 2)使用相应的掩模(掩膜)放置在硅片上进行曝光,曝光时间和强度根据SU-8光刻胶的类型和厚度进行调整。 所以加热必须缓慢,冷却应在热板上随热板冷却到室温。 6) 超声显影,得到光刻胶图形。 7) 将SU-8胶微结构在150℃-200℃下在热板上进行固化. 结合DMD 数字光刻及LED 光源, 本文提出一种正反面焦平面移动的低功率重复曝光方法, 实现了SU-8在整个深度上所需能量的充分聚合, 同时有效防止了SU-8 顶部过曝光、 底部欠曝光的情况。
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